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| BCW31 ... BCW33 BCW31 ... BCW33 NPN Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung 2.9 0.1 0.4 3 1.30.1 1.1 NPN 250 mW SOT-23 (TO-236) 0.01 g Version 2006-07-28 Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Type Code 1 1.9 2 Dimensions - Mae [mm] 1=B 2=E 3=C Maximum ratings (TA = 25C) Collector-Emitter-volt. - Kollektor-Emitter-Spannung Collector-Base-voltage - Kollektor-Basis-Spannung Collector-Base-voltage - Kollektor-Basis-Spannung Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Peak Collector current - Kollektor-Spitzenstrom Peak Base current - Basis-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open VCEO VCBO VEB0 Ptot IC ICM IBM Tj TS 2.5 max Grenzwerte (TA = 25C) BCW31 BCW32 32 V 32 V 5V 250 mW 1) 100 mA 200 mA 200 mA -55...+150C -55...+150C BCW33 Characteristics (Tj = 25C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis VCE = 5 V, IC = 10 A BCW31 BCW32 BCW33 BCW31 BCW32 BCW33 hFE hFE hFE hFE hFE hFE VCEsat VCEsat - - - 110 200 420 - - Kennwerte (Tj = 25C) Typ. 90 150 270 - - - 120 mV 210 mV Max. - - - 220 450 800 250 mV - VCE = 5 V, IC = 2 mA Collector-Emitter saturation voltage - Kollektor-Sattigungsspannung 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/ (c) Diotec Semiconductor AG 1 BCW31 ... BCW33 Characteristics (Tj = 25C) Min. Base-Emitter saturation voltage - Basis-Sattigungsspannung 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-Emitter-voltage - Basis-Emitter-Spannung 2) IC = 2 mA, VCE = 5 V Collector-Base cutoff current - Kollektor-Basis-Reststrom VCB = 30 V, (E open) VCE = 30 V, Tj = 100C, (E open) Emitter-Base cutoff current VEB = 5 V, (C open) Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 10 V, IE =ie = 0, f = 1 MHz Noise figure - Rauschzahl VCE = 5 V, IC = 200 A, RG = 2 k f = 1 kHz, f = 200 Hz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Marking - Stempelung F RthA - - < 420 K/W 1) BCW29, BCW30 BCW31 = D1 BCW32 = D2 BCW33 = D3 10 dB CCBO - 2.5 pF 6 pF fT 100 MHz - - IEB0 - - 100 nA ICB0 ICB0 - - - - 100 nA 10 A VBE 550 mV - 700 mV VBEsat VBEsat - - 750 mV 850 mV - - Kennwerte (Tj = 25C) Typ. Max. 2 1 Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG 2 |
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